In our example, the optimal N-doping is only optimal for the chosen values for the P-doping and the other parameters such as the absorption and the diffusion length. First, and whatever the choice of the optimized parameters, the method does not converge toward the optimum efficiency as it ignores parameters' interdependence. The experimental and the theoretical procedures suffer from two killing drawbacks. Similarly, the theoretical procedure would study by numerical simulation the impact of the N-doping concentration on the solar cell efficiency while keeping all the other parameters constant.
One experimental example of this procedure could be the study of the impact of the N-doping on the solar cell efficiency by elaborating a solar cell with multiple N-doping concentrations in a feasible range, while keeping the P-doping, the composition, the layers' thicknesses, and all the other parameters constant. The traditionally used standard experimental or theoretical procedure to study the impact of these parameters, or at least a subset of them, is the parametric analysis: the solar cell efficiency variation is studied with respect to the variation of one arbitrarily chosen parameter, while the other parameters are kept constant. All these parameters are interdependent: e.g., the optimal absorption depends on the available layer thickness and the diffusion length, while the optical parameters depend on the composition. This development involves complex steps, including the active layers elaboration, doping, passivation, and device realization, and thus involves a large set of technological and physical parameters to optimize: the layers' composition, their dopings, thicknesses, optical parameters, absorptions, mobilities, and diffusion lengths. Numerical design and optimization are crucial in the development of new solar cell technology, where the main objective is to optimize the solar cell efficiency with respect to the material properties and device technological parameters.
#Pc1d material files license#
This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
#Pc1d material files code#
One can adapt these models to any solar cell technology by changing the parameter set, the here proposed generic code structure remaining unchanged. Several models for solar cells have been implemented in SLALOM, including, for instance, InGaN. SLALOM is implemented to be extended to any semiconductor simulation engine. Applied to indium gallium nitride (InGaN) solar cells, it shows its potential to become a useful tool for the development of novel solar cells.
#Pc1d material files free#
In this work, we propose a new open-source and free solar cell optimizer: SLALOM − for SoLAr ceLl multivariate OptiMizer − that implements a rigorous multivariate approach, which improves from the one-parameter-at-a-time procedure that is traditionally used in the field to a state-of-the-art multivariate approach. Indeed, the technological steps involved in the development of high-performance solar cells involve a huge set of interdependent physical and geometrical parameters: layers thicknesses, dopings, compositions, and defect characteristics. The design and optimization of novel structures is an essential part of the next-generation solar cells development. Université de Lorraine, CentraleSupélec, LMOPS, 57000 Metz, France Please refer to the Final Project page for more information about the requirements for this assignment.Sidi Ould Saad Hamady and Nicolas Fressengeas * The activities in project 2 expand upon the concepts covered in lab 4. " PC1D, v5.9." School of Photovoltaic and Renewable Energy Engineering, University of New South Wales. Planning, Drafting, Revising, Editing/Proofreading ( PDF) The following files are used with permission of Tom Delaney, the course writing instructor. "What is Light?" and "Simple Harmonic Motion, Forced Vibrations, and Origin of Refractive Index." Ch. "The Invention of the Transistor - 'An Example of Creative-Failure Methodology.'" National Bureau of Standards (May 1974): SP-388.
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